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參數資料
| 型號： | 2SC2351-Q |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-346 |
| 中文描述： | 晶體管|晶體管|叩| 12V的五（巴西）總裁|提供70mA一（c）|的SOT - 346 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 30K |
| 代理商： | 2SC2351-Q |
SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1984
FEATURES
NF
MAG
1.5 dB TYP.
14 dB
@ f = 1.0 GHz
@ f = 1.0 GHz
TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
25
12
3.0
70
250
150
V
V
V
mA
mW
°
C
°
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
μ
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
μ
A
V
EB
= 2.0 V, I
C
= 0
DC Current Gain
h
FE
40
200
V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
4.5
GHz
V
CE
= 10 V, I
C
= 20 mA
Output Capacitance
C
ob
0.75
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
9
11
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.5
3.0
dB
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
Maximum Available Gain
MAG
14
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
h
FE
Classification
Class
E/P *
F/Q *
Marking
R2
R3
h
FE
40 to 120
100 to 200
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.8±0.2
2
1
0
0
0
0
0
+
0
0
+
0
0
+
0
0.65
+0.1
0.15
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