
2SC2371
NPN Silicon
Power Transistors
Features
With TO-126 package
Video applications
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
300
V
VCBO
Collector-Base Voltage
300
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current
0.1
A
PC
Collector power dissipation
10
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
300
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=200Vdc,IE=0)
---
0.1
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0)
---
0.1
mAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=10mAdc, VCE=10Vdc)
40
250
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=30mAdc, IB=3.0Adc)
---
1.5
Vdc