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參數資料
| 型號： | 2SC2412KRLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors(NPN Silicon) |
| 中文描述： | 通用晶體管（NPN硅） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 184K |
| 代理商： | 2SC2412KRLT1 |
LESHAN RADIO COMPANY, LTD.
M36–1/3
General Purpose Transistors
NPN Silicon
1
3
2
2SC2412K*LT1
CASE 318–07, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
50
V
Collector–Base Voltage
V
CBO
60
V
Emitter–Base Voltage
V
EBO
7.0
V
Collector Current — Continuous
I
C
150
mAdc
Collector power dissipation
P
C
0.2
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55
~
+150
°C
DEVICE MARKING
2SC2412K*LT1 =G1F
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(I
C
= 1 mA)
Emitter–Base Breakdown Voltage
(I
E
= 50
μ
A)
Collector–Base Breakdown Voltage
(I
C
= 50
μ
A)
Collector Cutoff Current
(V
CB
= 60 V)
Emitter cutoff current
(V
EB
= 7 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= 50 mA / 5m A)
DC current transfer ratio
(V
CE
= 6 V, I
C
= 1mA)
Transition frequency
(V
CE
= 12 V, I
E
= – 2mA, f =30MHz )
Output capacitance
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
V
(BR)CEO
50
—
—
V
V
(BR)EBO
7
—
—
V
V
(BR)CBO
60
—
—
V
I
CBO
—
—
0.1
μ
A
I
EBO
—
—
0.1
μ
A
V
CE(sat)
—
—
0.4
V
h
FE
120
––
560
––
f
T
—
180
––
MHz
C
ob
—
2.0
3.5
pF
h
FE
values are classified as follows:
Q
R
S
hFE
120~270
180~390
270~560
2
EMITTER
3
COLLECTOR
1
BASE
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相關代理商/技術參數 |
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|---|---|
| 2SC2412KRTB | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2412KS | 制造商:ROHM 制造商全稱:Rohm 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-59 |
| 2SC2412KSLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors(NPN Silicon) |
| 2SC2412KT | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2412KT146 | 制造商:ROHM Semiconductor 功能描述:TRANSISTOR SMD 制造商:Rohm 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin SMT T/R |
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