- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33361 > 2SC2458-GR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SC2458-GR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 654K |
| 代理商： | 2SC2458-GR |
2SC2458
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2458
Audio Amplifier Applications
High current capability: IC = 150 mA (max)
High DC current gain: hFE = 70~700
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF (2) = 1dB (typ.), 10dB (max)
Complementary to 2SA1048.
Small package.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
70
700
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
Noise figure
NF
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kΩ
1.0
10
dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC2459 | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2462LBTR | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2462LD01 | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2462LCTR-E | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2462LC01 | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2458-GR(F) | 制造商:Toshiba 功能描述:NPN 50V 0.15A 200 to 400 MINI Bulk |
| 2SC2458-GR(F,T) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2458-GR(TPE4 | 制造商:Toshiba America Electronic Components 功能描述:Vceo50V,Ic150mA,Vce(sat)0.25V,hfe,200to4 |
| 2SC2458L | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR (AUDIO, LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
| 2SC2458L_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT process) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。