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參數資料
| 型號： | 2SC2497S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126B |
| 封裝： | TO-126B, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 65K |
| 代理商： | 2SC2497S |
Power Transistors
1
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A
I Features
High collector to emitter voltage V
CEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings T
C = 25°C
1 : Emitter
2 : Collector
3 : Base
TO-126B Package
Unit: mm
I Electrical Characteristics T
C = 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
70
V
Collector to
2SC2497
VCEO
50
V
emitter voltage
2SC2497A
60
Emitter to base voltage
VEBO
5V
Peak collector current
ICP
3A
Collector current
IC
1.5
A
Collector power dissipation
PC
1.2 *
1
W
5 *
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 20 V, IE = 0
1
A
ICEO
VCE = 10 V, IB = 0
100
A
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
10
A
Collector to base voltage
VCBO
IC = 1 mA, IE = 0
70
V
Collector to emitter
2SC2497
VCEO
IC = 2 mA, IB = 0
50
V
voltage
2SC2497A
60
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 1 A
80
220
Collector to emitter saturation voltage
VCE(sat)
IC = 1.5 A, IB = 0.15 A
1
V
Base to emitter saturation voltage
VBE(sat)
IC = 1.5 A, IB = 0.15 A
1.5
V
Transition frequency
fT
VCB = 5 V, IE = 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
35
pF
Rank
R
S
hFE
80 to 160
120 to 220
8.0
+0.5
–0.1
1.9
±0.1
3.05
±0.1
3.8
±0.3
11.0
±0.5
16.0
±1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1
Note) *1: Without heat sink
*2: With a 100
× 100 × 2 mm A1 heat sink
Note) *: Rank classification
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