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參數(shù)資料
型號(hào): 2SC2570A-T
廠商: NEC Corp.
英文描述: HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
中文描述: 高頻低噪聲放大器NPN硅外延晶體管
文件頁數(shù): 1/8頁
文件大小: 119K
代理商: 2SC2570A-T
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1980, 1999
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
Low noise and high gain
Wide dynamic range
: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 5.0 mA
: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, V
CE
= 10 V, I
C
= 15 mA
ORDERING INFORMATION
Part Number
Quantity
2SC2570A
Loose products (500 pcs)
2SC2570A-T
Taping products (Box type) (2 500 pcs)
Remark
To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 °C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
25
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
70
mA
Total Power Dissipation
P
tot
600
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
–65 to +150
°C
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