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參數資料
型號: 2SC2631
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
中文描述: 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN
文件頁數: 1/3頁
文件大?。?/td> 231K
代理商: 2SC2631
Transistors
1
Publication date: March 2003
SJC00117BED
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
■ Features
Satisfactory linearity of forward current transfer ratio h
FE
High collector-emitter voltage (Base open) V
CEO
Small collector output capacitance (Common base, input open cir-
cuited) Cob
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
150
V
Collector-emitter voltage (Base open)
VCEO
150
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 100 A, I
B
= 0
150
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 100 V, IE = 01
A
Forward current transfer ratio *
hFE
VCE
= 5 V, I
C
= 10 mA
130
330
Collector-emitter saturation voltage
VCE(sat)
IC = 30 mA, IB = 3 mA
1
V
Transition frequency
fT
VCB = 10 V, IE = 10 mA, f = 200 MHz
160
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
3
pF
(Common base, input open circuited)
Noise voltage
NV
VCE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
150
300
mV
Rg = 100 k, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE
130 to 220
185 to 330
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數
參數描述
2SC26310RA 功能描述:TRANS NPN 150VCEO 50MA TO-92 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SC2631QRSTA 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC26320R 功能描述:TRANS NPN 150VCEO 50MA TO-92L RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SC2632R 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC2632-S 制造商:MATSUSHITA 功能描述: 制造商:Panasonic Electric Works 功能描述:
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