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參數資料
| 型號： | 2SC2671(F) |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43A, TO-92-B1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 53K |
| 代理商： | 2SC2671(F) |
1
Publication date: March 2002
SJC00122BED
Transistor
s Electrical Characteristics T
a = 25°C
2SC2671(F)
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
s Features
Low noise figure NF
High gain
High transition frequency f
T
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage *
VCER
14
V
Emitter to base voltage
VEBO
2V
Collector current
IC
80
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 10 V, IE = 01
A
Emitter cutoff current
IEBO
VEB = 1 V, IC = 01
A
Forward current transfer ratio
hFE
VCE = 8 V, IC = 40 mA
50
150
300
Transition frequency *
fT
VCE = 8 V, IC = 40 mA, f = 800 MHz
3.5
5.5
GHz
Collector output capacitance *
Cob
VCB = 10 V, IE = 0, f = 1 MHz
0.8
1.5
pF
Foward transfer gain
S
21e
2
VCE = 8 V, IC = 40 mA, f = 800 MHz
9
12
dB
Maximum unilateral power gain *
GUM
VCE = 8 V, IC = 40 mA, f = 800 MHz
10
13
15
dB
Noise figure *
NF
VCE = 8 V, IC = 40 mA, f = 800 MHz
2.0
3.2
dB
Second inter modulation distortion *
IM2
VCE = 8 V, IC = 40 mA, f1 = 200 MHz
50
60
dB
f2 = 500 MHz, VO = 100 dB/75
Third inter modulation distortion *
IM3
VCE = 8 V, IC = 40 mA, f1 = 600 MHz
75
86
dB
f2 = 500 MHz, VO = 100 dB/75
Unit: mm
s Absolute Maximum Ratings T
a = 25°C
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Note) *: REB = 1 k
Note) *: LTPD = 10%
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