欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SC2721-MA
元件分類: 小信號晶體管
英文描述: 700 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁數: 1/6頁
文件大小: 107K
代理商: 2SC2721-MA
1998
Document No. D16149EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SC2721
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Complementary transistor with 2SA1154
High PT in small dimension and high voltage
PT = 1 W, VCEO = 60 V
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
5.0
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (pulse)
IC(pulse)*1.0
A
Total power dissipation
PT
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
100
nA
DC current gain
hFE1
VCE = 1.0 V, IC = 0.1 A *
90
200
400
DC current gain
hFE2
VCE = 1.0 V, IC = 0.5 A *
50
150
DC base voltage
VBE
VCE = 6.0 V, IC = 10 mA
600
635
700
mV
Collector saturation voltage
VCE(sat)
IC = 0.5 A, IB = 50 mA *
0.12
0.35
V
Base saturation voltage
VBE(sat)
IC = 0.5 A, IB = 50 mA *
0.90
1.2
V
Output capacitance
Cob
VCB = 6.0 V, IE = 0, f = 1.0 MHz
13
pF
Gain bandwidth product
fT
VCE = 6.0 V, IE =
10 mA
110
MHz
Turn-on time
ton
60
ns
Storage temperature
tstg
600
ns
Turn-off time
toff
Refer to the test circuit.
650
ns
* Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed
hFE CLASSIFICATION
Marking
MA
LA
KA
hFE1
90 to 180
135 to 270
200 to 400
相關PDF資料
PDF描述
2SC2733HCUL VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC2733HCUR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC2733HCTR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC2733HC01 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC2733HCTL VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SC2736 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. SC-5930V .05A .15W ECB SURFACE MT
2SC2737 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9220V .08A .6W BEC
2SC2739 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220AB 500V 7A 40W
2SC2750 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR MP-80150V 15A 100W BCE 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC2751 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
主站蜘蛛池模板: 吴堡县| 汉源县| 巴塘县| 阳朔县| 江华| 阿瓦提县| 海口市| 浮梁县| 郁南县| 金湖县| 安国市| 都昌县| 镇巴县| 万载县| 凤翔县| 石渠县| 崇礼县| 辽源市| 南投县| 胶南市| 庄浪县| 靖江市| 德格县| 成安县| 泰顺县| 尉氏县| 大新县| 腾冲县| 武川县| 巢湖市| 万安县| 宣恩县| 霞浦县| 龙泉市| 四子王旗| 建阳市| 建平县| 河东区| 崇义县| 阜新| 聂荣县|