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參數資料
| 型號： | 2SC2879A |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
| 中文描述： | 硅型瑞展2?30MHz的辦學線性功率放大器應用（低電源電壓使用） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 196K |
| 代理商： | 2SC2879A |
2SC2879A
2007-11-01
1
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2879A
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
z
Specified 12.5V, 28MHz Characteristics
z
Output Power
: Po = 100W
PEP
z
Power Gain
: Gp = 13dB
z
Collector Efficiency
:
η
C
= 35% (Min.)
z
Intermodulation Distortion IMD =
24dB(Max.)
(MIL Standard)
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
45
V
Collector-Emitter Voltage
V
CES
45
V
Collector-Emitter Voltage
V
CEO
18
V
Emitter-Base Voltage
V
EBO
4
V
Collector Current
I
C
25
A
Collector Power Dissipation
P
C
250
W
Junction Temperature
T
j
175
°C
Storage Temperature Range
T
stg
65~175
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
MARKING
Dot
Lot No.
JEDEC
EIAJ
TOSHIBA
Weight: 5.2g
—
—
2–13B1A
Unit in mm
2SC2879
JAPAN
TOSHIBA
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