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參數資料
| 型號： | 2SC2882-O |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 400 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-5K1A, SC-62, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 133K |
| 代理商： | 2SC2882-O |
2SC2882
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2882
Power Amplifier Applications
Voltage Amplifier Applications
Suitable for driver of 30 to 35 watts audio amplifier
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1202
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
80
mA
PC
500
Collector power dissipation
PC
(Note 1)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC2882 | 400 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2882-Y | 400 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2882 | 400 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2882-O | 400 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2883-O | 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC2884-Y(C,F) | 功能描述:兩極晶體管 - BJT Transistor NPN 30V 0.8A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC2884-Y(TE12L,CF | 功能描述:兩極晶體管 - BJT Transistor NPN 30V 0.8A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC2884Y(TE12L,CF) | 制造商:Toshiba 功能描述:NPN |
| 2SC2885-AZ-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2898 | 制造商:n/a 功能描述:2SC2898 TO220 N9H1D 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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