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參數資料
| 型號： | 2SC2905 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-6 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 14K |
| 代理商： | 2SC2905 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 1.0 A
17
V
BVCBO
IC = 10 mA
35
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 15 V
2.0
mA
IEBO
VCE = 3.0 V
3.0
mA
hFE
VCE = 10 V
IC = 1.0 A
10
200
---
Cob
VCB = 12.5 V
f = 1.0 MHz
150
pF
PG
ηηηη
C
VCE = 12.5 V
POUT = 45 W
f = 520 MHz
4.8
60
65
dB
%
NPN SILICON RF POWER TRANSISTOR
2SC2905
DESCRIPTION:
The
ASI 2SC2905 is designed for
high power amplifier applications in
UHF band.
FEATURES:
Emitter Ballasted construction.
P
G = 4.8 dB at 45 W/520 MHz
Omnigold Metalization System
Common Emitter
MAXIMUM RATINGS
IC
15 A
VCBO
35 V
VCEO
17 V
VCES
36 V
VEBO
4.0 V
PDISS
120 W @ TC = 25°C
TJ
-55 °C to +175 °C
TSTG
-55 °C to +175 °C
θθθθ
JC
1.0 °C/W
PACKAGE STYLE .500 6L FLG
MIN IMU M
inche s / m m
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAX IMU M
.220 / 5.59
.007 / 0.18
.510 / 12.95
inche s / m m
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.32
N
M
.120 / 3.05
.135 / 3.43
.150 / 3.43
.160 / 4.06
.125 / 3.18
.090 / 2.29
.105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.7 25/18 ,4 2
I
G
J
K
L
M
A
D
C
B
2x N
FU LL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.33
.200 / 5.08
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相關代理商/技術參數 |
參數描述 |
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| 2SC2910 | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN SC-51 |
| 2SC2910S | 制造商:n/a 功能描述:2SC2910S S3B2A |
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