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參數資料
| 型號： | 2SC2958-L-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 80K |
| 代理商： | 2SC2958-L-AZ |
1998
Document No. D16150EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Ideal for use of high voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion
correction
Complementary transistor with 2SA1221 and 2SA1222
VCEO = 140 V: 2SA1221/2SC2958
VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
160
V
Collector to emitter voltage
VCEO
140/160
V
Emitter to base voltage
VEBO
5.0
V
Collector current (DC)
IC(DC)
500
mA
Collector current (pulse)
IC(pulse)*1.0
A
Total power dissipation
PT
1.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
200
nA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
200
nA
DC current gain
hFE **
VCE = 2.0 V, IC = 100 mA
100
150
400
DC base voltage
VBE **
VCE = 5.0 V, IC = 20 mA
0.6
0.64
0.7
V
Collector saturation voltage
VCE(sat) **
IC = 1.0 A, IB = 0.2 A
0.32
0.7
V
Base saturation voltage
VBE(sat) **
IC = 1.0 A, IB = 0.2 A
1.1
1.3
V
Output capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
13
30
pF
Gain bandwidth product
fT
VCE = 10 V, IE =
20 mA
30
60
MHz
** Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed
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