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參數資料
型號: 2SC3076O
元件分類: 小信號晶體管
英文描述: 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁數: 1/5頁
文件大?。?/td> 162K
代理商: 2SC3076O
2SC3076
2010-02-05
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications
Power Switching Applications
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
Excellent switching time: tstg = 1.0 μs (typ.)
Complementary to 2SA1241
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
1
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
相關PDF資料
PDF描述
2SC3120 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3124TE85R VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
2SC3124TE85L VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
2SC3241 18 A, 20 V, NPN, Si, POWER TRANSISTOR
2SC3286-M VHF BAND, Si, NPN, RF POWER TRANSISTOR
相關代理商/技術參數
參數描述
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2SC3077 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | TO-236
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