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參數(shù)資料
| 型號： | 2SC3098 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-3F1A, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 166K |
| 代理商： | 2SC3098 |
2SC3098
2003-03-19
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3098
UHF~C Band Low Noise Amplifier Applications
Low noise figure
NF = 2.5dB, |S21e|2 = 14.5dB (f = 500 MHz)
NF = 3.0dB, |S21e|2 = 9.0dB (f = 1 GHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
50
mA
Base current
IB
25
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Microwave Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 10 V, IC = 10 mA
3.5
GHz
S21e
2 (1)
VCE = 10 V, IC = 10 mA, f = 500 MHz
14.5
Insertion gain
S21e
2 (2)
VCE = 10 V, IC = 10 mA, f = 1 GHz
9
dB
NF (1)
VCE = 10 V, IC = 5 mA, f = 500 MHz
2.5
Noise figure
NF (2)
VCE = 10 V, IC = 5 mA, f = 1 GHz
3
dB
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
mA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
mA
DC current gain
hFE
VCE = 10 V, IC = 10 mA
30
80
300
Collector output capacitance
Cob
1.15
pF
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz
(Note)
0.75
pF
Note: Cre is measured by 3-terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3099 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR SC 20V .03A .15W ECB SURFACE MT |
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| 2SC3101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
| 2SC3102 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
| 2SC3103 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
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