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參數資料
型號: 2SC3122
元件分類: 小信號晶體管
英文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: 2-3F1A, SC-59, 3 PIN
文件頁數: 1/5頁
文件大小: 142K
代理商: 2SC3122
2SC3122
2003-03-19
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3122
TV VHF RF Amplifier Applications
High gain: Gpe = 24dB (typ.) (f = 200 MHz)
Low noise: NF = 2.0dB (typ.) (f = 200 MHz)
Excellent forward AGC characteristics
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
20
mA
Base current
IB
10
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 25 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 2 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
30
V
DC current gain
hFE
VCE = 10 V, IC = 2 mA
60
150
300
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz
0.3
0.45
pF
Transition frequency
fT
VCE = 10 V, IC = 2 mA
400
650
MHz
Power gain
Gpe
20
24
28
dB
Noise figure
NF
VCE = 12 V, VAGC = 1.4 V, f = 200 MHz
2.0
3.2
dB
AGC voltage
VAGC
VCC = 12 V, GR = 30dB, f = 200 MHz
(Note)
3.6
4.4
5.1
V
Note: VAGC measured by test circuit shown in Figure 1 when power gain is reduced to 30dB compared that of VAGC
at 1.4 V.
Unit: mm
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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