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參數資料
| 型號： | 2SC3125 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-59, 2-3F1A, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 267K |
| 代理商： | 2SC3125 |
2SC3125
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3125
TV Final Picture IF Amplifier Applications
Good linearity of fT
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
50
mA
Base current
IB
25
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 3 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
25
V
DC current gain
hFE
VCE = 10 V, IC = 10 mA
20
70
200
Collector-emitter
VCE (sat)
0.2
Saturation voltage
Base-emitter
VBE (sat)
IC = 15 mA, IB = 1.5 mA
1.5
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.1
1.6
pF
Collector-base time constant
Ccrbb’
VCB = 10 V, IC = 1 mA, f = 30 MHz
25
ps
Transition frequency
fT
VCE = 10 V, IC = 10 mA
250
600
MHz
Marking
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3136TPE2 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3138-Y | 50 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC3150L | 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC3152-K | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC3152K | 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-218 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC3125_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
| 2SC3127 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. SC-5912V .05A .15W EBC SURFACE MT |
| 2SC3127ID-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC3128 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 20V .05A .35W BEC |
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