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參數資料
| 型號： | 2SC3313 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type) |
| 中文描述： | 30 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | NS-B1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SC3313 |
1
Transistor
2SC3313
Silicon NPN epitaxial planer type
For high-frequency amplification
I
Features
G
Optimum for high-density mounting.
G
Allowing supply with the radial taping.
G
Optimum for RF amplification of FM/AM radios.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
300
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Common emitter reverse transfer capacitance
Reverse transfer impedance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
C
re
Z
rb
f
T
Conditions
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –1mA, f = 2MHz
V
CB
= 10V, I
E
= –1mA, f = 200MHz
min
30
20
5
70
150
typ
250
max
250
1.6
60
Unit
V
V
V
pF
MHz
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 160
110 ~ 250
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC3314 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR S-TYPE 30V .03A .3W ECB |
| 2SC3314B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-72 |
| 2SC3314C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-72 |
| 2SC3315 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORS-TYPE 30V .015A .3W ECB |
| 2SC3316 | 制造商: 功能描述:2SC3316 |
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