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參數資料
型號: 2SC3324-GR
元件分類: 小信號晶體管
英文描述: 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: 2-3F1A, SC-59, TO-236MOD, 3 PIN
文件頁數: 1/5頁
文件大小: 663K
代理商: 2SC3324-GR
2SC3324
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3324
Audio Frequency Low Noise Amplifier Applications
High voltage: VCEO = 120 V
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 200~700
Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
Complementary to 2SA1312
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
相關PDF資料
PDF描述
2SC3336-E 15 A, 400 V, NPN, Si, POWER TRANSISTOR
2SC3356-R26 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3360-N16 100 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3365-E 10 A, 400 V, NPN, Si, POWER TRANSISTOR
2SC3365-E 10 A, 400 V, NPN, Si, POWER TRANSISTOR
相關代理商/技術參數
參數描述
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