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參數資料
| 型號： | 2SC3356Q-T1B |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 767K |
| 代理商： | 2SC3356Q-T1B |
NPN SILICON RF TRANSISTOR
NE85633 / 2SC3356
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
3-PIN MINIMOLD
Document No. PU10209EJ02V0DS (2nd edition)
Date Published June 2004 CP(K)
The mark shows major revised points.
FEATURES
Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE85633-A
2SC3356
50 pcs (Non reel)
8 mm wide embossed taping
NE85633-T1B-A
2SC3356-T1B
3 kpcs/reel
Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Free air
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| 2SC3356 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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| 2SC3357-RH | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC3356R | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346 |
| 2SC3356R23 | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346 |
| 2SC3356R24 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC3356R25 | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346 |
| 2SC3356S | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346 |
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