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參數(shù)資料
| 型號(hào)： | 2SC3357-T1RH |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | POWER, MINIMOLD PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 86K |
| 代理商： | 2SC3357-T1RH |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1985, 2003
FEATURES
Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
Large Ptot : Ptot = 1.2 W (Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate)
Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC3357
25 pcs (Non reel)
12 mm wide embossed taping
2SC3357-T1
1 kpcs/reel
Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
1.2
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3357-T1RE | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-T1RH | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-RH | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3359STPQ | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3359STP/Q | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3357-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
| 2SC3357-TI | 制造商:UNKNOWN 功能描述:2SC3357-TI |
| 2SC3358 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 2SC3359 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9280V .3A .4W ECB |
| 2SC3359P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92 |
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