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參數資料
| 型號： | 2SC3417-C |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SC3417-C |
83002TN (KT)/71598HA (KT)/10996TS (KOTO) X-6063/3237KI/3075KI/1114KI, MT No.1390-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Ultrahigh-Definition CRT Display
Video Output Applications
Ordering number:ENN1390D
2SA1353/2SC3417
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1353
Specifications
Absolute Maximum Ratings at Ta = 25C
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SA1353/2SC3417]
Applications
Ultrahigh-definition CRT display.
Color TV chroma output, high-voltage driver appli-
cations.
Features
High breakdown voltage : VCEO≤300V.
Excellent high frequency characteristics :
Cre=1.8pF(typ).
Adoption of MBIT process.
1 :Emitter
2 : Collector
3 : Base
SANYO : TO-126
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* : 2SA1353/2SC3417 are classified by 10mA hFE as follows :
Continued on next page.
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