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參數資料
| 型號： | 2SC3507 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 5 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SC-92, TOP-3F-A1, FULL PACK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 60K |
| 代理商： | 2SC3507 |
1
Power Transistors
2SC3507
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1000
1000
800
7
10
5
3
80
3
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
I
Features
G
High-speed switching
G
High collector to base voltage V
CBO
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO(sus)*
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 0.5A, L = 50mH
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 0.6A, I
B2
= –1.2A,
V
CC
= 250V
min
800
6
typ
6
max
50
50
1.5
1.5
1
2.5
0.5
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
*
V
CEO(sus)
Test circuit
X
L 50mH
15V
1
Y
G
6V
120
50/60Hz
mercury relay
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0
±
0.3
11.0
±
0.2
2
±
0
1
±
0
1
S
3
0
1
±
0
5.0
±
0.2
3.2
10.9
±
0.5
5.45
±
0.3
3
2
1
1.1
±
0.1
2.0
±
0.2
0.6
±
0.2
2.0
±
0.1
φ
3.2
±
0.1
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