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參數資料
| 型號： | 2SC3582-TK-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PA33, SC-43B, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 83K |
| 代理商： | 2SC3582-TK-A |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC3582
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
Document No. PU10210EJ01V0DS (1st edition)
(Previous No. P10359EJ2V1DS00)
Date Published May 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1984, 2003
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from
VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an
our proprietary new fabrication technique.
FEATURES
Low noise : NF = 1.2 dB TYP. @ VCE = 8 V, IC = 7 mA, f = 1 GHz
High gain : Ga = 12 dB TYP. @ f = 1 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC3582
500 pcs (Non reel)
18 mm wide radial taping
2SC3582-T
2.5 kpcs/box (Box type)
Supplying paper tape with in a box
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 500 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
Ptot
Note
600
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free air
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3582-K | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3582-TK | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3582-TK | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3585 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3585-S | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC3583-A | 功能描述:RF TRANSISTOR NPN SOT-23 制造商:cel 系列:- 包裝:剪帶 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:9GHz 噪聲系數（dB，不同 f 時的典型值）:1.2dB @ 1GHz 增益:15dB 功率 - 最大值:200mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 20mA，8V 電流 - 集電極（Ic）（最大值）:65mA 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商器件封裝:SOT-23-3 標準包裝:1 |
| 2SC3583T1B | 制造商:NEC 功能描述:* 制造商:NEC 功能描述:Transistor 3k per reel |
| 2SC3583-T1B | 制造商:NEC 功能描述:Transistor 3k per reel 制造商:NEC Electronics Corporation 功能描述: |
| 2SC3583-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 10V 0.065A 3-Pin SC-59 T/R |
| 2SC3583-T1B-A(R) | 制造商:Renesas Electronics 功能描述:NPN |
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