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參數資料
| 型號： | 2SC3588-ZL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MP-3, SC-63, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 738K |
| 代理商： | 2SC3588-ZL |
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SILICON POWER TRANSISTOR
2SC3588-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
DATA SHEET
Document No. D17289EJ4V0DS00 (4th edition)
(Previous No. TC-1663A)
Date Published July 2006 NS CP(K)
Printed in Japan
1985, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SC3588-Z is designed for High Voltage Switching, especially in
Hybrid Integrated Circuits.
FEATURES
High Voltage VCEO = 400 V
Complement to 2SA1400-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
500
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (DC)
IC(DC)
0.5
A
Collector Current (pulse)
Note 1
IC(pulse)
1.0
A
Total Power Dissipation (TA = 25
°C) Note 2
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm
2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
<R>
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| 2SC3596-F | Si, NPN, RF POWER TRANSISTOR, TO-126 |
| 2SA1402-F | Si, PNP, RF POWER TRANSISTOR, TO-126 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC3589 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-220 |
| 2SC3596 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126 80V .3A 1.2W ECB |
| 2SC3597 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-126 80V .5A 1.2W |
| 2SC3597-E | 制造商:SANYO Semiconductor Co Ltd 功能描述: |
| 2SC3597E/D | 制造商:SANYO Semiconductor Co Ltd 功能描述: |
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