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參數資料
| 型號： | 2SC3600-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 42K |
| 代理商： | 2SC3600-E |
92502AS (KT)/71598HA (KT)/3127KI/2225MW, TS No.1765-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Ultrahigh-Definition CRT Display
Video Output Applications
Ordering number:ENN1765B
2SA1406/2SC3600
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SA1406/2SC3600]
Applications
Ultrahigh-definition CRT display.
Video output.
Color TV chroma output.
Wide-band amp.
Features
High fT : fT typ=400MHz.
High breakdown voltage : VCEO≥200V.
Small reverse transfer capacitance and excellent HF
response
: Cre=1.4pF (NPN), 1.7pF (PNP).
Complementary PNP and NPN types.
Adoption of FBET process.
( ) : 2SA1406
Specifications
Absolute Maximum Ratings at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
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相關代理商/技術參數 |
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| 2SC3601E | 功能描述:TRANS NPN 200V 150MA TO126-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC3605 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. TO-9220V .08A .6W BEC |
| 2SC3608 | 制造商:TOS 功能描述:2SC3608 TOSHIBA'95 |
| 2SC3611 | 功能描述:TRANS NPN HF 50VCEO .15A TO-126 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC3615 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9250V .3A .75W ECB |
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