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參數資料
| 型號： | 2SC3611 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type(For video amplifier) |
| 中文描述： | 0.15 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 70K |
| 代理商： | 2SC3611 |
Power Transistors
2SC3611
Silicon NPN epitaxial planar type
201
For video amplifier
I
Features
High transition frequency f
T
Small collector output capacitance C
ob
Wide current range
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I
Absolute Maximum Ratings
T
C
=
25
°
C
1 : Base
2 : Collector
3 : Emitter
TO-126B-A1 Package
Unit: mm
I
Electrical Characteristics
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
110
V
Collector to emitter voltage
V
CER
V
CEO
V
EBO
100
V
50
V
Emitter to base voltage
3.5
V
Peak collector current
I
CP
I
C
P
C
300
mA
Collector current
150
mA
Collector power
dissipation
T
C
= 25
°
C
T
a
= 25
°
C
1.2
W
4.0
*
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CEO
V
CE
= 35 V, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
C
= 500
μ
A, R
BE
= 470
I
C
= 1 mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 5 V, I
C
= 100 mA
I
C
= 150 mA, I
B
= 15 mA
V
CB
= 10 V, I
E
=
10 mA, f = 200 MHz
V
CB
= 10 V, I
E
=
110 mA, f = 200 MHz
V
CB
= 30 V, I
E
= 0, f = 1 MHz
10
μ
A
Collector to base voltage
V
CBO
V
CER
V
CEO
110
V
Collector to emitter voltage
100
V
50
V
Emitter to base voltage
V
EBO
h
FE
V
CE(sat)
3.5
V
Forward current transfer ratio
20
Collector to emitter saturation voltage
0.5
V
Transition frequency
f
T1
f
T2
C
ob
300
MHz
350
MHz
Collector output capacitance
3
pF
Note)*: With a 100
×
100
×
2 mm A1 heat sink
8.0
+0.5
–
0.1
1
±
3
±
3
±
1
±
1
±
3.2
±0.2
0.75
±0.1
0.5
±0.1
2.3
±0.2
4.6
±0.2
0.5
±0.1
1.76
±0.1
1
2
3
φ
3.16
±0.1
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