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參數資料
| 型號： | 2SC3670-D |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7D101A, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 119K |
| 代理商： | 2SC3670-D |
2SC3670
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3670
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
VCES
30
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed
(Note 1)
ICP
5
A
Base current
IB
0.5
A
Collector power dissipation
PC
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
VCEO
IC = 10 mA, IB = 0
10
―
V
Emitter-base breakdown voltage
VEBO
IC = 1 mA, IC = 0
6
―
V
hFE (1)
(Note 2)
VCE = 1 V, IC = 0.5 A
140
―
600
DC current gain
hFE (2)
VCE = 1 V, IC = 2 A
70
200
―
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 50 mA
―
0.2
0.5
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 2 A
―
0.86
1.5
V
Transition frequency
fT
VCE = 1 V, IC = 0.5 A
―
150
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
27
―
pF
Note 2: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC3672-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 300V 0.1A 3-Pin MSTM |
| 2SC3672-O(T2ASH,FM | 功能描述:TRANS NPN 100MA 300V SC71 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態:停產 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:500mV @ 2mA，20mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:30 @ 20mA，10V 功率 - 最大值:1W 頻率 - 躍遷:80MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:SC-71 供應商器件封裝:MSTM 標準包裝:1 |
| 2SC3673(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 40V 2A 3-Pin MSTM |
| 2SC3678 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR MT100 900V 5A 100W BCE |
| 2SC3679 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR MT1 900V 5A 100W BCE |
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