欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SC3906K
廠商: Rohm CO.,LTD.
英文描述: High-voltage Amplifier Transistor(120V, 50mA)
中文描述: 高電壓放大器晶體管(120伏特,50mA的)
文件頁數: 1/1頁
文件大小: 57K
代理商: 2SC3906K
2SC4102 / 2SC3906K / 2SC2389S
Transistors
High-voltage Amplifier Transistor
(120V, 50mA)
2SC4102 / 2SC3906K / 2SC2389S
!
Features
1) High breakdown voltage. (BV
CEO
= 120V)
2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
2SC4102 / 2SC3906K
2SC2389S
P
C
Tj
Tstg
Limits
120
120
5
50
0.2
0.3
150
55~
+
150
Unit
V
V
V
mA
W
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
Junction temperature
Storage temperature
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
2SC2389S
SPT
RS
TP
5000
2SC3906K
SMT3
RS
T
T146
3000
2SC4102
UMT3
RS
T
T106
3000
Code
Basic ordering unit (pieces)
Denotes h
FE
!
External dimensions
(Units : mm)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
2SC3906K
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC4102
(1) Emitter
(2) Base
(3) Collector
1.25
2.1
0
0
0
0.1Min.
(
0
0
0
0
(
2
1
(
0
Each lead has same dimensions
0
0
0
0.3Min.
1
(
(
2.8
1.6
0
(
2
1
0
ROHM : SPT
EIAJ : SC-72
2SC2389S
(1) Emitter
(2) Collector
(3) Base
Each lead has same dimensions
0.45
2.5
(1) (2) (3)
(
5
3
3
0.45
0.5
4
2
Taping specifications
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
120
120
5
180
Typ.
140
2.5
Max.
0.5
0.5
0.5
560
Unit
V
V
V
μ
A
μ
A
V
MHz
pF
Conditions
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
100V
V
EB
=
4V
I
C
/I
B
=
10mA/1mA
V
CE
=
6V, I
C
=
2mA
V
CE
=
12V, I
E
=
2mA, f
=
100MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
相關PDF資料
PDF描述
2SC2389S High-voltage Amplifier Transistor(120V, 50mA)
2SC4102 High-voltage Amplifier Transistor(120V, 50mA)
2SC3907 NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SC3912 Switching Applications(with Bias Resistance)
2SA1518 Switching Applications(with Bias Resistance)
相關代理商/技術參數
參數描述
2SC3906KFRAT146S 制造商:ROHM Semiconductor 功能描述:
2SC3906KT146 制造商:ROHM Semiconductor 功能描述:
2SC3906KT146E/R/S 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, General Purpose, 120V,
2SC3906KT146R 功能描述:兩極晶體管 - BJT NPN 120V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC3906KT146S 功能描述:兩極晶體管 - BJT NPN 120V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
主站蜘蛛池模板: 页游| 闵行区| 镇安县| 马龙县| 永定县| 开平市| 罗田县| 盱眙县| 尚义县| 砚山县| 花垣县| 河西区| 梁平县| 盱眙县| 吴川市| 巴楚县| 绩溪县| 祁阳县| 观塘区| 桦甸市| 莱芜市| 施甸县| 新竹县| 北京市| 宝应县| 涞水县| 金华市| 淮安市| 上虞市| 宜兴市| 北票市| 调兵山市| 尚义县| 河池市| 安丘市| 贡觉县| 周口市| 辉南县| 彭山县| 高青县| 民丰县|