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參數資料
| 型號： | 2SC3970 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 1.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220F |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SC3970 |
1
Power Transistors
2SC3970, 2SC3970A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
I
Features
G
High-speed switching
G
High collector to base voltage V
CBO
G
Wide area of safe operation (ASO)
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
800
900
800
900
500
8
3.0
1.5
0.5
25
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
2SC3970
2SC3970A
2SC3970
2SC3970A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 800V, I
E
= 0
V
CB
= 900V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 0.6A
I
C
= 0.6A, I
B
= 0.17A
I
C
= 0.6A, I
B
= 0.17A
V
CE
= 10V, I
C
= 0.1A, f = 1MHz
I
C
= 0.6A, I
B1
= 0.17A, I
B2
= – 0.34A,
V
CC
= 200V
min
500
15
8
typ
20
max
100
100
100
1.0
1.5
1.0
3.0
0.3
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
2SC3970
2SC3970A
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
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| 2SC3970A | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC3971 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC3971A | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC3972 | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC3971 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220FA 800V 3A 30W BCE |
| 2SC3974 | 功能描述:TRANS NPN 500VCEO 7A TOP-3F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC3975 | 功能描述:TRANS NPN 500VCEO 10A TOP-3F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC3977 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FA 100V 1A 30W BCE |
| 2SC3978 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FA 1000V 2A 35W BCE |
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