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參數資料
| 型號： | 2SC4060-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 92K |
| 代理商： | 2SC4060-BP |
Features
With TO-247 package
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
450
V
VCBO
Collector-Base Voltage
600
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current
20
A
PC
Collector power dissipation
150
W
TJ
Junction Temperature
150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCBO
Collector-base breakdown voltage
(IC=1mAdc; IE=0)
600
---
Vdc
V(SUS)CEO
Collector-Emitter Breakdown Voltage
(IC=20mAdc, IB=0)
450
---
Vdc
VEBO
Emitter-base breakdown voltages
(IC=1mA; IB=0)
7.0
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=600Vdc,IE=0)
---
0.1
mAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0)
---
0.1
mAdc
ICEO
Collector-emitter Cutoff Current
(VCE=450V; IB=0)
---
0.1
mAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=10Adc, VCE=5.0Vdc)
10
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10Adc, IB=2.0Adc)
---
1.0
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=10Adc,IB=2.0Adc)
---
1.5
Vdc
TO-247
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
www.mccsemi.com
Revision: 1
2003/04/21
NPN Silicon
Power Transistors
2SC4060
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.866
---
22.00
B
---
.669
---
17.00
C
.185
.209
4.70
5.30
D
.039
.055
1.00
1.40
E
.067
.091
1.70
2.30
F
---
.098
---
2.50
G
.207
.222
5.25
5.65
H
.106
.130
2.70
3.30
J
.018
.033
0.45
0.85
K
.748
---
19.00
---
L
.583
.598
14.80
15.20
M
.067
.106
1.70
2.70
P
---
.177
---
4.50
Q
.122
.138
3.10
3.50
R
.197
.236
5.00
6.00
U
.461
.500
11.70
12.70
V
---
.138
---
3.50
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
H
A
K
B
E
C
R
J
P
U L
1
2
3
Q
G
V
D
F
M
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