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參數(shù)資料
型號(hào): 2SC4093-T2RBF
元件分類(lèi): 小信號(hào)晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: MINIMOLD PACKAGE-4
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 63K
代理商: 2SC4093-T2RBF
DATA SHEET
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1991
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
Low Noise
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz
High Power Gains
S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4093-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
2SC4093-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5
°
5
°
5
°
5
°
0
to
0.1
0.8
2.9±0.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
0.1
0.16
+0.1
0.06
0.4
4
1
3
2
+0.1
0.05
2.8
+0.2
0.3
1.5
+0.2
0.1
0.6
+0.1
0.05
0.4
+0.1
0.05
0.4
+0.1
0.05
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SC4094R36 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR
2SC4094R37 制造商:NEC 制造商全稱(chēng):NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR
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