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參數資料
| 型號： | 2SC4095 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-4 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 95K |
| 代理商： | 2SC4095 |
DATA SHEET
SILICON TRANSISTOR
2SC4095
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band.
2SC4095 features excellent power gain with very low-noise figures.
2SC4095 employs direct nitiride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values.
This allows
excellent associated gain and very wide dynamic range.
FEATURES
NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
S21e2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
AVEB = 1 V, IC = 0
DC Current Gain
hFE
50
100
250
VCE = 6 V, IC = 10 mA
Gain Bandwidth Product
fT
10
GHz
VCE = 6 V, IC = 10 mA f = 1.0 GHz
Feed-Back Capacitance
Cre
0.25
0.8
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
7.5
9.5
dB
VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain
MAG
12
dB
VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF
1.8
3.0
dB
VCE = 6 V, IC = 5 mA, f = 2.0 GHz
hFE Classification
Class
R46/RDF *
R47/RDG *
R48/RDH *
Marking
R46
R47
R48
hFE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5
°
5
°
5
°
5
°
0
to
0.1
0.8
2.9±0.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
0.1
0.16
+0.1
0.06
0.4
4
1
3
2
+0.1
0.05
2.8
+0.2
0.3
1.5
+0.2
0.1
0.6
+0.1
0.05
0.4
+0.1
0.05
0.4
+0.1
0.05
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4095(NE68039E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC4095-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:剪帶 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:10GHz 噪聲系數（dB，不同 f 時的典型值）:1.8dB @ 2GHz 增益:12dB 功率 - 最大值:200mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 10mA，6V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應商器件封裝:- 標準包裝:1 |
| 2SC4095-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:10GHz 噪聲系數（dB，不同 f 時的典型值）:1.8dB @ 2GHz 增益:12dB 功率 - 最大值:200mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 10mA，6V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:TO-253-4，TO-253AA 供應商器件封裝:SOT-143 標準包裝:3,000 |
| 2SC4095-T1-A-RDF | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4095-T1-A-RDG | 制造商:Renesas Electronics Corporation 功能描述: |
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