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參數(shù)資料
| 型號： | 2SC4111 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 10 A, 700 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP3L, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 56K |
| 代理商： | 2SC4111 |
1
Power Transistors
2SC4111
Silicon NPN triple diffusion planar type
For horizontal deflection output
I
Features
G
High-speed switching
G
High collector to base voltage V
CBO
G
Wide area of safe operation (ASO)
G
Satisfactory linearity of foward current transfer ratio h
FE
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1500
700
7
22
10
3.5
150
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 750V, I
E
= 0
V
CB
= 1500V, I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
I
C
= 7A, I
B
= 2.5A
I
C
= 7A, I
B
= 2.5A
V
CE
= 10V, I
C
= 1A, f = 0.5MHz
I
C
= 6A, L
leak
= 5
μ
H,
I
B1
= 1.7A, I
B2
= –1.7A
min
7
5
3
typ
2
max
10
1
8
5
1.5
12
0.6
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±
0.5
6
1
2
±
0
2
±
0
1
2
S
10.9
±
0.5
1
2
3
2.0
±
0.3
3.0
±
0.3
1.0
±
0.2
5.0
±
0.3
3.0
4
2
5.45
±
0.3
0.6
±
0.2
1.5
2.7
±
0.3
1.5
2
φ
3.3
±
0.2
3
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