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參數(shù)資料
| 型號： | 2SC4116-GR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | USM, 2-2E1A, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 172K |
| 代理商： | 2SC4116-GR |
2SC4116
2003-03-27
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4116
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE: hFE = 70~700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1586
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
0.1
mA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
mA
DC current gain
(Note)
hFE
(Note)
VCE = 6 V, IC = 2 mA
70
700
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
Noise figure
NF
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kW,
1.0
10
dB
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700, ( ) marking symbol
Marking
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4116-O | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4116-Y-TP | 150 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4116-GR-TP | 150 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4117-BL | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4117 | 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4116-GR(T5LSUMF | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC4116-GR(TE85L,F | 制造商:Toshiba 功能描述:NPN Tape & Reel 制造商:Toshiba America Electronic Components 功能描述:Transistor, Small Signal 制造商:Toshiba 功能描述:SMALL-SIGNAL TRANSISTOR |
| 2SC4116-GR,LF | 功能描述:TRANS NPN 50V 0.15A USM 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:150mA 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:250mV @ 10mA，100mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:70 @ 2mA，6V 功率 - 最大值:100mW 頻率 - 躍遷:80MHz 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商器件封裝:USM 標(biāo)準(zhǔn)包裝:1 |
| 2SC4116-GRT5LFT | 制造商:Toshiba America Electronic Components 功能描述:BIPOLAR SMALL-SIGNAL TRANSISTOR |
| 2SC4116-GRTE85LF | 功能描述:兩極晶體管 - BJT 150mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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