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參數資料
| 型號： | 2SC4210-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | S-MINI, 2-3F1A, SC-59, TO-26MOD, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 308K |
| 代理商： | 2SC4210-Y |
2SC4210
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4210
Audio Power Amplifier Applications
High DC current gain: hFE = 100~320
Complementary to 2SA1621
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
V
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
100
320
DC current gain
hFE (2)
VCE = 1 V, IC = 700 mA
35
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 20 mA
0.5
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 10 mA
0.5
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 10 mA
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
13
pF
Note: hFE (1) classification O: 100~200, Y: 160~320
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4211 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR |
| 2SC4211-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR |
| 2SC4211-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR |
| 2SC4211-6-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 0.15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4211-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR |
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