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參數資料
| 型號： | 2SC4213-B |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | USM, 2-2E1A, SC-70, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 508K |
| 代理商： | 2SC4213-B |
2SC4213
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4213
For Muting and Switching Applications
High emitter-base voltage: VEBO = 25 V (min)
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA)
Low on resistance: RON = 1 (typ.) (IB = 5 mA)
High DC current gain: hFE = 200~1200
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
300
mA
Base current
IB
60
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
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