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參數資料
| 型號： | 2SC4223M |
| 英文描述： | TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 1.5A I(C) | TO-221VAR |
| 中文描述： | 晶體管|晶體管|叩| 800V的五（巴西）總裁| 1.5AI（丙）|至221VAR |
| 文件頁數： | 1/5頁 |
| 文件大小： | 165K |
| 代理商： | 2SC4223M |
2SC4203
2002-07-23
1
TOSHIBA Transistor Silicon Epitaxial Planar Type
2SC4203
Video Output for High Definition VDT
High Speed Switching Applications
High transition frequency: f
T
= 400 MHz (typ.)
Low output capacitance: C
ob
< 5 pF (max) (V
CB
= 30 V)
High voltage: V
CEO
= 150 V
High power dissipation: P
C
= 10 W
Maximum Ratings
(Ta = 25°C)
(V
CE
= 10 V, I
C
= 70 mA)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
180
V
Collector-emitter voltage
V
CEO
150
V
Emitter-base voltage
V
EBO
5
V
Collector current (DC)
I
C
0.3
A
Collector current (pulse)
I
CP
0.5
A
Base current
I
B
0.2
A
Ta = 25°C
1.0
Power dissipation
Tc = 25°C
P
C
10
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7B2A
Weight: 0.36 g (typ.)
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