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參數資料
| 型號： | 2SC4245 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | USM, SC-70, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 663K |
| 代理商： | 2SC4245 |
2SC4245
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4245
TV Tuner, UHF Mixer Applications
VHF~UHF Band RF Amplifier Applications
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
50
mA
Base current
IB
25
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 2 V, IC = 0
1.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
15
V
DC current gain
hFE
VCE = 10 V, IC = 5 mA
40
100
200
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz
0.6
0.9
pF
Transition frequency
fT
VCE = 10 V, IC = 2 mA
1500
2400
MHz
Conversion gain
Gce
12
17
dB
Noise figure
NF
VCC = 10 V, IC = 2 mA, f = 800 MHz,
fL = 830 MHz (+2dBm) (Figure 1)
8
13
dB
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
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