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參數(shù)資料
| 型號： | 2SC4408 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 117K |
| 代理商： | 2SC4408 |
2SC4408
2004-07-26
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4408
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High collector power dissipation: PC = 900 mW
High-speed switching: tstg = 500 ns (typ.)
Complementary to 2SA1680
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.2
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
―
1.0
A
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
―
1.0
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
―
V
hFE (1)
VCE = 2 V, IC = 100 mA
120
―
400
DC current gain
hFE (2)
VCE = 2 V, IC = 1.5 A
40
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.05 A
―
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 0.05 A
―
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 100 mA
―
100
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IC = 0, f = 1 MHz
―
14
―
pF
Turn-on time
ton
―
0.1
―
Storage time
tstg
―
0.5
―
Switching time
Fall time
tf
IB1 = IB2 = 0.05 A, duty cycle ≤ 1%
―
0.1
―
s
Unit: mm
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
I B1
20 s
30 V
Output
30
IB2
IB1
Input
I B2
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PDF描述 |
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| 2SC4408 | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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| 2SA1683S | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4408(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 50V 2A 3-Pin TO-92 Mod |
| 2SC4408(TE6,F,M) | 功能描述:兩極晶體管 - BJT Transistor NPN, 50V, 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4408(TPE6,F) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC4409 (T12L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC4409(TE12L,F) | 功能描述:兩極晶體管 - BJT NPN 50V 2A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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