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參數資料
型號: 2SC4428-M
元件分類: 功率晶體管
英文描述: 6 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: TO-3PML, 3 PIN
文件頁數: 1/4頁
文件大小: 41K
代理商: 2SC4428-M
2SC4428
No.2851-1/4
Features
High breakdown voltage, high reliability.
High-speed switching (tr : 0.1s typ).
Wide ASO.
Adoption of MBIT process.
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1100
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
7V
Collector Current
IC
6A
Collector Current (Pulse)
ICP
PW
≤300s, duty cycle≤10%
20
A
Base Current
IB
3A
Collector Dissipation
PC
3W
Tc=25
°C55
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0A
10
A
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
10
A
DC Current Gain
hFE1VCE=5V, IC=0.4A
10*
40*
hFE2VCE=5V, IC=2A
8
Continued on next page.
* : The hFE1 of the 2SC4428 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank
KL
M
hFE
10 to 20
15 to 30
20 to 40
Ordering number : EN2851A
71206 / 42506KB MS IM TB-00002147 / 13004TN (KT) / D1898HA (KT) / N248MO, TS
2SC4428
NPN Triple Diffused Planar Silicon Transistor
800V / 6A Switching Regulator
Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
相關PDF資料
PDF描述
2SC4429L 8 A, 800 V, NPN, Si, POWER TRANSISTOR
2SC4429-K 8 A, 800 V, NPN, Si, POWER TRANSISTOR
2SC4429 8 A, 800 V, NPN, Si, POWER TRANSISTOR
2SC4430M 12 A, 800 V, NPN, Si, POWER TRANSISTOR
2SC4430-M 12 A, 800 V, NPN, Si, POWER TRANSISTOR
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