- 您現在的位置：買賣IC網 > PDF目錄33319 > 2SC4488S 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SC4488S |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | NMP, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 57K |
| 代理商： | 2SC4488S |
2SA1708 / 2SC4488
No.3094-1/5
Features
Adoption of FBET, MBIT processes.
High breakdown voltage, large current capacity.
Fast switching speed.
Specifications ( ) : 2SA1708
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)120
V
Collector-to-Emitter Voltage
VCEO
(--)100
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)1
A
Collector Current (Pulse)
ICP
(--)2
A
Collector Dissipation
PC
1W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)100V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
DC Current Gain
hFE
VCE=(--)5V, IC=(--)100mA
100*
400*
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)100mA
120
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(13)8.5
pF
Continued on next page.
* : The 2SA1708 / 2SC4488 are classified by 100mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
www.semiconductor-sanyo.com/network
Ordering number : EN3094A
22509EA MS IM TC-00001859 / 93003TN (KT)/83098HA(KT)/4249MO, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SA1708 / 2SC4488
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1714 | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SA1714-L | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SA1720-AZ | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SA1720 | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SA1726O | 6 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4488S-AN | 功能描述:兩極晶體管 - BJT BIP NPN 1A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4488T | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SC4488T-AN | 功能描述:兩極晶體管 - BJT BIP NPN 1A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4489S-AN | 功能描述:兩極晶體管 - BJT BIP NPN 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4489T | 制造商:Sony Semiconductor Solutions Division 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。