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參數資料
| 型號： | 2SC4509 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 208K |
| 代理商： | 2SC4509 |
1
2SC4509
FUJI POWER TRANSISTOR
TRIPLE DIFFUSED PLANER TYPE
HIGH VOLTAGE,HIGH SPEED SWITCHING
Features
High voltage,High speed switching
Low saturation voltage
High reliability
Applications
Switching regulators
DC-DC convertors
Solid state relay
General purpose power amplifiers
Thermal characteristics
Item
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)
Junction to case
1.56
°C/W
V
A
W
°C
Item
Symbol
Ratings
Unit
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
-55 to +150
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max.
Units
V
mA
V
s
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
Test Conditions
ICBO = 1mA
IC = 200mA
IEBO = 1mA
VCBO = 450V
VEBO = 10V
IC = 1A, VCE = 5V
IC = 4A, IB = 0.8A
IC = 5A, IB1 = 0.5A
IB2 = -1A, RL = 30 ohm
Pw = 20s Duty=<2%
500
400
10
0.1
25
65
0.8
1.2
1.0
2.5
0.5
Outline Drawings
TO-3PF
JEDEC
(TO-3PF)
EIAJ
-
500
400
-
10
3
80
+150
Collector-Base voltage
VCBO
Collector-Emitter voltage
VCEO
Collector-Emitter voltage
VCEO(SUS)
Emitter-Base voltage
VEBO
Collector current
IC
Base current
IB
Collector power disspation
PC
Operating junction temperature
Tj
Storage temperature
Tstg
Item
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time
Thermal resistance
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