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參數(shù)資料
型號(hào): 2SC4540
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-5K1A, SC-62, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 150K
代理商: 2SC4540
2SC4540
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4540
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA)
High speed switching time: tstg = 0.4 μs (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1735
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
1
A
Base current
IB
0.2
A
Collector power dissipation
PC
500
mW
Collector power dissipation
PC
(Note 1)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
相關(guān)PDF資料
PDF描述
2SC4544 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR
2SC4545Q 1.5 A, 40 V, NPN, Si, POWER TRANSISTOR
2SC4548E 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243
2SA1740-D 200 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SC4548D 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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