- 您現在的位置：買賣IC網 > PDF目錄33403 > 2SC4569-GB UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SC4569-GB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-59, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 109K |
| 代理商： | 2SC4569-GB |
SILICON TRANSISTOR
2SC4569
UHF TV TUNER OSC/MIXER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. PU10036EJ01V0DS (1st edition)
(Previous No. P10374EJ3V1DS00)
Date Published October 2001 CP(K)
Printed in Japan
NEC Corporation 1989
NEC Compound Semiconductor Devices 2001
The mark
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
DESCRIPTION
The 2SC4569 is an NPN silicon epitaxial transistro intended for use as
UHF oscillator and UHF mixer in a tuner of TV receiver.
FEATURES
High gain bandwidty product
fT = 5.0 GHz TYP.
Low output capacitance
Cob = 0.9 pF TYP.
Surface mount package
EIAJ: SC-59
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Maximum Voltages and Current
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
60
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
55 to +125
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.1
AVCB = 15 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
AVEB = 1 V, IC = 0
Collector Saturation Voltage
VCE(sat)
0.5
V
hEF = 10, IC = 5 mA
DC Current Gain
hFE
40
100
200
VCE = 5 V, IC = 5 mA *1
Gain Bandwidth Product
fT
5.0
GHz
VCE = 5 V, IC = 5 mA f = 1.0 GHz
Output Capacitance
Cob
0.9
1.2
pF
VCB = 5 V, IE = 0, f = 1.0 MHz
Insertion Gain
S21e
2
5.0
dB
VCE = 5 V, IC = 5 mA, f = 1.0 MHz
*1 Pulsd: PW
≤ 35
S, Dyty Cycle ≤ 2 %
hFE Classification
Class
T75/EB *
T76/FB *
T77/GB *
Marking
T75
T76
T77
hFE
40 to 80
60 to 120
100 to 200
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.2
1.1
to
1.4
0
to
0.1
0.95
0.3
0.95
0.4
+0.1
0.05
0.4
+0.1
0.05
0.16
+0.1
0.06
0.65
+0.1
0.15
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC4569-T75 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4569-T77 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4569-T76 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4570-T1-T73 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4570-T73 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4570-T1-A(T73) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4571-T1-A-T76 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4572-RA7 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SC458 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4580-7100 | 功能描述:兩極晶體管 - BJT VCEO=450 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。