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參數資料
| 型號： | 2SC4569T75 |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | TO-236 |
| 中文描述： | 晶體管|晶體管|叩| 12V的五（巴西）總裁| 60mA的一（c）|至236 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 51K |
| 代理商： | 2SC4569T75 |
DATA SHEET
SILICON TRANSISTOR
2SC4569
UHF TV TUNER OSC/MIXER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10374EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
1989
DESCRIPTION
The 2SC4569 is an NPN silicon epitaxial transistro intended for use as
UHF oscillator and UHF mixer in a tuner of TV receiver.
FEATURES
High gain bandwidty product
f
T
= 5.0 GHz TYP.
Low output capacitance
C
ob
= 0.9 pF TYP.
Surface mount package
EIAJ: SC-59
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Maximum Voltages and Current
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
60
150
125
V
V
V
mA
mW
C
C
55 to +125
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
A
V
EB
= 1 V, I
C
= 0
Collector Saturation Voltage
V
CE(sat)
0.5
V
h
EF
= 10, I
C
= 5 mA
DC Current Gain
h
FE
40
100
200
V
CE
= 5 V, I
C
= 5 mA
*1
Gain Bandwidth Product
f
T
5.0
GHz
V
CE
= 5 V, I
C
= 5 mA f = 1.0 GHz
Output Capacitance
C
ob
0.9
1.2
pF
V
CB
= 5 V, I
E
= 0, f = 1.0 MHz
Insertion Gain
S
21e
2
5.0
dB
V
CE
= 5 V, I
C
= 5 mA, f = 1.0 MHz
*1
Pulsd: PW 35 S, Dyty Cycle 2 %
h
FE
Classification
Class
T75
T76
T77
Marking
T75
T76
T77
h
FE
40 to 80
60 to 120
100 to 200
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.8±0.2
2
1
0
0
0
0
0
+
0
0
+
0
0
+
0
0.65
+0.1
0.15
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