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參數(shù)資料
| 型號： | 2SC4570T73-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶體管|晶體管|叩| 12V的五（巴西）總裁| 30mA的一（c）|的SOT - 323 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 66K |
| 代理商： | 2SC4570T73-T2 |
DATA SHEET
SILICON TRANSISTOR
2SC4570
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
Document No. P10408EJ2V0DS00 (2nd edition)
(Previous No. TC-2434)
Date Published March 1997 N
Printed in Japan
1993
DESCRIPTION
The 2SC4570 is a low supply voltage transistor designed for UHF
OSC/MIX.
It is suitable for a high density surface mount assembly since the
transistor has been applied super mini mold package.
FEATURES
High f
T
: 5.5 GHz TYP. (@ V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz)
Low C
ob
: 0.7 pF TYP. (@ V
CB
= 5 V, I
E
= 0, f = 1 MHz)
Super Mini Mold Package. (EIAJ : SC-70)
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4570-T1
3 kpcs./Reel
Embossed tape 8 mm wide. Pin 3 (Collector) face
to perforation side of the tape.
2SC4570-T2
3 kpcs./Reel
Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2
(Base) face to perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4570)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3
30
120
125
V
V
V
mA
mW
C
C
55 to +125
PACKAGE DIMENSIONS
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Collector
Emitter
Base
2.1±0.1
2
0
0
0
0
0
0
+
0
0
+
0
0
+
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4570T74-T1 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-323 |
| 2SC4570T74-T2 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC4572 | NPN Triple Diffused Planar Silicon Transistor for 800V/20mA Switching Applications(用于800V/20mA轉(zhuǎn)換應(yīng)用的NPN三路硅平面擴散型晶體管) |
| 2SC4589 | Silicon NPN Triple Diffused(三倍擴散NPN晶體管) |
| 2SC4596E | SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4571-T1-A-T76 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4572-RA7 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SC458 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4580-7100 | 功能描述:兩極晶體管 - BJT VCEO=450 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4580-7112 | 功能描述:兩極晶體管 - BJT VCEO=450 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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