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參數資料
| 型號： | 2SC4585 |
| 廠商： | Shindengen Electric Manufacturing Company, Ltd. |
| 英文描述： | Switching Power Transistor(10A NPN) |
| 中文描述： | 晶體管開關電源（10A條NPN）的 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 437K |
| 代理商： | 2SC4585 |
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : ITO-3P
HFX Series
Switching Power Transistor
10A NPN
2SC4585
(TP10W80HFX)
●
Absolute Maximum Ratings
Item
Symbol
Tstg
Tj
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
Vdis
TOR
Conditions
Ratings
-55
～1
50
1
50
1
200
800
7
1
0
20
4
8
85
2
0.8
Unit
℃
℃
V
V
V
A
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
A
Base Current Peak
Total Transistor Dissipation
Dielectric Strength
Mounting Torque
Tc = 25
℃
Terminals to case, AC
1
minute
(Recommended torque : 0.5N
m)
W
kV
N
m
●
Electrical Characteristics (Tc=25
℃
)
Item
Collector to Emitter Sustaining Voltage
Symbol
V
CEO
(sus)
I
CBO
I
CEO
I
EBO
h
FE
h
FEL
V
CE
(sat)
V
BE
(sat)
θ
jc
f
T
ton
ts
tf
Conditions
Ratings
Min 800
Max 0.
1
Max 0.
1
Max 0.
1
Min 8
Min 7
Max
1
.0
Max
1
.5
Max
1
.47
TYP 8
Max 0.5
Max 3.5
Max 0.3
Unit
V
mA
I
C
= 0.2A
At rated Voltage
Collector Cutoff Current
Emitter Cutoff Current
At rated Voltage
mA
DC Current Gain
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
=
1
mA
I
C
= 5A
I
B
=
1
A
Junction to case
V
CE
=
1
0V, I
C
=
1
A
I
C
= 5A
I
B
1
=
1
A, I
B2
= 2A
R
L
= 50
Ω
, V
BB2
= 4V
Collector to Emitter Saturation Voltage
V
V
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
℃
/W
MHz
μ
s
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4585-4100 | 功能描述:兩極晶體管 - BJT RO 627-2SC4585-7100 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4585-7100 | 功能描述:兩極晶體管 - BJT VCEO=800 IC=10 HFE=8 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4585-7112 | 功能描述:兩極晶體管 - BJT VCEO=800 IC=10 HFE=8 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4589 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4589-03 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR SUBBING WITH 2315272 |
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