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參數資料
| 型號： | 2SC4616ETP-FA |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP-FA, 4 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 63K |
| 代理商： | 2SC4616ETP-FA |
2SA1773 / 2SC4616
No.3399-1/5
Features
Large current capacity (IC=2A).
High breakdown voltage (VCEO≥400V).
Specifications ( ) : 2SA1773
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)400
V
Collector-to-Emitter Voltage
VCEO
(--)400
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)2
A
Collector Current (Pulse)
ICP
(--)4
A
Collector Dissipation
PC
1W
TC=25°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)300V, IE=0A
(--)1.0
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1.0
μA
DC Current Gain
hFE
VCE=(--)10V, IC=(--)100mA
40*
200*
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)100mA
(40)60
MHz
Output Capacitance
Cob
VCB=(--)30V, f=1MHz
(25)15
pF
Continued on next page.
* : The 2SA1773 / 2SC4616 are classified by 100mA hFE as follws:
Rank
C
D
E
hFE
40 to 80
60 to 120
100 to 200
www.semiconductor-sanyo.com/network
Ordering number : EN3399D
80509CB TK IM TC-00002035 / 93003TN (KT)/83198HA (KT)/30395TS/12894TH AX-8287/D251MH/5300TA (KOTO) X-6470, 6459
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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SANYO Semiconductors
DATA SHEET
2SA1773 / 2SC4616
2SA1773 : PNP Epitaxial Planar Silicon Transistor
2SC4616 : NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
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PDF描述 |
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| 2SC4616TP-FA | 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4616DTP | 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1773TP-FA | 2000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1773DTP | 2000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4616ETP | 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
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| 2SC4617 | 功能描述:兩極晶體管 - BJT 100mA 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4617EBTLP | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4617EBTLQ | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4617EBTLR | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4617EBTLS | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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