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參數資料
| 型號： | 2SC4623-C |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.3 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126ML, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 153K |
| 代理商： | 2SC4623-C |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Ultrahigh-Definition CRT Display
Video Output Applications
Ordering number:ENN3644
2SA1777/2SC4623
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83198HA (KT)/41694TH (KOTO) 8-7036 No.3644 1/4
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( ) : 2SA1777
Specifications
Absolute Maximum Ratings at Ta = 25 C
Package Dimensions
unit:mm
2042B
[2SA1777/2SC4623]
Features
High fT : fT=400MHz (typ).
High breakdown voltage : VCEO 250V(min).
High current.
Small reverse transfer capacitance and excellent
high-frequnecy characteristic :
Cre=3.4pF (NPN), 4.2pF (PNP).
Complementary pair with the 2SA1777/2SC4623.
Adoption of FBET process.
C
Electrical Characteristics at Ta = 25 C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Tc=25C
4.0
1.0
8.0
1.6
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1.5
7.5
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1.4
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15.5
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0.7
2.4
4.8
1.7
1
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* : The 2SA1777/2SC4623 are classified by 50mA hFE as follows :
Continued on next page.
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2SA1777/2SC4623
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC4623D | 0.3 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SA1777E | 0.3 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SA1777-C | 0.3 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SA1777-D | 0.3 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SC4623-E | 0.3 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4626JCL | 功能描述:TRANS NPN 20VCEO 30MA SSMINI-3 RoHS:是 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC4627 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4627J0L | 功能描述:TRANS NPN HF 20VCEO 15MA SS-MINI RoHS:是 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC4630 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220F1 1500V .1A 2W |
| 2SC4632 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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